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| GaAs Schottky Diodes TM (R) Low RS Series Pair MS8350 - P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features Capacitance (65 fF Typ.) Low Series Resistance (3 Typ.) Cut-Off Frequency > 500 GHz Large Gold Bond Pads Description The MS8350 is a GaAs flip chip series pair Schottky device designed for use as balanced mixer elements at microwave and millimeter wave frequencies. Their high cut-off frequency insures good performance at frequencies to 100 GHz. Applications include, transceivers, digital radios and automotive radar detectors. These flip chip devices incorporate Microsemi's expertise in GaAs material processing, silicon nitride protective coatings and high temperature metalization. They have large, 5 x 5 mil, bond pads for ease of insertion. The MS8350 is priced for high volume commercial and industrial applications Specifications @ 25C (Per Junction) VF (1 mA): 650-750 mV VF (1 mA): 10 mV Max. RS (10 mA): 7 Max. IR (3 V): 10 A Max. CT (0 V): 80 fF Max. Maximum Ratings Insertion Temperature Incident Power Forward Current Reverse Voltage Operating Temperature Storage Temperature 250C for 10 Seconds +20 dBm @ 25C 15 mA @ 25C 3V -55C to +125C -65C to +150C Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Schottky Diodes TM (R) Low RS Series Pair MS8350 - P2819 P2819 DIM A B C D E F G H J INCHES MIN. 0.0275 0.0185 0.0046 0.0046 0.0195 0.0050 0.0045 0.0105 0.0095 MAX. 0.0285 0.0195 0.0056 0.0056 0.0205 0.0060 0.0055 0.0115 0.0105 MIN. 0.698 0.470 0.117 0.117 0.495 0.127 0.114 0.267 0.241 MM MAX. 0.724 0.495 0.142 0.142 0.521 0.152 0.140 0.292 0.267 Spice Model Parameters (Per Junction) IS A 3.2 x10-13 RS 3 1 N TT Sec 0 CJ0 pF 0.045 CP pF 0.02 0.50 M EG eV 1.42 VJ V 0.85 BV V 4 IBV A 1 x 10-5 Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 |
Price & Availability of MS8350-P2819
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